document number: 88612 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 28-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 glass passivated single-phase bridge rectifier gbpc12, gbpc15, gbpc25, gbpc35 vishay general semiconductor features ? ul recognition file number e54214 ? universal 3-way terminals: snap-on, wire wrap-around, or pcb mounting ? typical i r less than 0.3 a ? high surge current capability ? low thermal resistance ? solder dip 260 c, 40 s ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec typical applications general purpose use in ac/dc bridge full wave rectification for power supply, home app liances, office equipment, industrial automation applications. mechanical data case: gbpc, gbpc-w epoxy meets ul 94 v-0 flammability rating terminals: nickel plated on faston lugs or silver plated on wire leads, solderable per j-std-002 and jesd22-b102. e4 suffix for consumer grade. suffix letter w added to indicate wire leads (e.g. gbpc12005w). polarity: as marked, positive l ead by belevled corner mounting torque: 20 inches-lbs. max. primary characteristics i f(av) 12 a, 15 a, 25 a, 35 a v rrm 50 v to 1000 v i fsm 200 a, 300 a, 300 a, 400 a i r 5 a v f 1.1 v t j max. 150 c ~ ~ ~ ~ ~ ~ gbpc gbpc-w maximum ratings (t a = 25 c unless otherwise noted) parameter symbol gbpc12, 15, 25, 35 unit 005 01 02 04 06 08 10 maximum repetitive pe ak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified output current (fig. 1) gbpc12 i f (av) 12 a gbpc15 15 gbpc25 25 gbpc35 35 peak forward surge current single sine-wave superimposed on rated load gbpc12 i fsm 200 a gbpc15 300 gbpc25 300 gbpc35 400 rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing gbpc12 i 2 t 160 a 2 s gbpc15 375 gbpc25 375 gbpc35 660 rms isolation voltage from case to leads v iso 2500 v operating junction storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88612 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 28-mar-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 gbpc12, gbpc15, gbpc25, gbpc35 vishay general semiconductor notes (1) with heatsink (2) bolt down on heatsink with silicone thermal compound between br idge and mounting surface for maximum heat transfer with #10 scr ew electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol gbpc12, 15, 25, 35 unit 005 01 02 04 06 08 10 maximum instantaneous forward drop per diode gbpc12 i f = 6.0 a v f 1.1 v gbpc15 i f = 7.5 a gbpc25 i f = 12.5 a gbpc35 i f = 17.5 a maximum reverse dc current at rated dc blocking vo ltage per diode t a = 25 c i r 5.0 a t a = 125 c 500 typical junction capacitance per diode 4 v, 1 mhz c j 300 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol gbpc12, 15, 25, 35 unit 005 01 02 04 06 08 10 typical thermal resistance gbpc12 to gbpc25 r ? jc (1) 1.9 c/w gbpc35 1.4 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode gbpc1206-e4/51 15.79 51 100 paper box gbpc1506-e4/51 15.79 51 100 paper box gbpc2506-e4/51 15.79 51 100 paper box gbpc3506-e4/51 15.79 51 100 paper box gbpc1206w-e4/51 13.8 51 100 paper box gbpc1506w-e4/51 13.8 51 100 paper box gbpc2506w-e4/51 13.8 51 100 paper box gbpc3506w-e4/51 13.8 51 100 paper box
document number: 88612 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 28-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 gbpc12, gbpc15, gbpc25, gbpc35 vishay general semiconductor ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum output rectified current fig. 2 - maximum output rectified current fig. 3 - maximum power dissipation fig. 4 - maximum non-repe titive peak forward surge current per diode fig. 5 - typical instantaneous forward characteristics per diode fig. 6 - typical reverse leakage characteristics per diode 0 25 50 75 100 125 150 175 200 0 5 20 15 25 10 30 35 40 bridges mounte d on 9.5 x 3.5 x 4.6" (22.9 x 8.9 x 11.7 cm) al, finned plate 5 x 6 x 4.9" al, finned plate 5 x 4 x 3" al, finned plate 6 x 2.2 x 2.2" al, finned plate 60 hz resistive or inductive load case temperature (c) average forward current (a) 0 10 20 30 40 50 60 70 80 90 100 0 5 10 15 20 25 30 35 40 60 hz resistive or inductive load gbpc35 r thsa = 0.5 c/w gbpc15 r thsa = 1.0 c/w gbpc12 r thsa = 1.0 c/w gbpc25 r thsa = 0.5 c/w ambient temperature (c) average forward cu rrent (a) average output current (a) average power dissipation of bridge (w) 0 10 20 30 40 0 10 20 30 40 50 60 70 80 capacitive load t j = t j max. resistive or inductive load number of cycles at 60 hz peak forward surge current (a) 1 10 10 1000 gbpc35 gbpc15 gbpc25 gbpc12 t j = t j max. 0.5 ms single sine-wave 100 100 1.0 cycle instantaneous forward voltage (v) instantaneous forward current (a) 0.4 0.5 0.6 0.7 0.9 1.0 1.1 0.1 1 10 100 0.8 t a = 100 c t a = 150 c t a = 125 c t a = 25 c 0 20 40 60 80 100 0.1 1 10 100 percent of rated peak reverse voltage (%) instantaneous reverse leakage current (a) 30 50 70 90 1000 t a = 100 c t a = 150 c t a = 125 c t a = 25 c 10
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 88612 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 28-mar-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 gbpc12, gbpc15, gbpc25, gbpc35 vishay general semiconductor fig. 7 - typical junction capacitance per diode fig. 8 - typical transient thermal impedance per diode package outline dimensions in inches (millimeters) 1 10 100 10 100 1000 t j = 25 c f = 1.0 mhz v sig = 50 mvp-p reverse voltage (v) junction capacitance (pf) 0.01 0.1 1 10 100 1 10 100 1000 t j = 25 c f = 1.0 mhz v sig = 50 mvp-p t - heating time (s) transient thermal impedance (c/w) 1.135 (28.8) 1.115 (28.3) 0.732 (18.6) 0.692 (17.6) 0.470 (11.9) 0.430 (10.9) 0.042 (1.07) 0.038 (0.97) dia. 0.310 (7.87) 0.290 (7.36) 1.25 (31.8) min. 1.135 (28.8) 1.115 (28.3) 0.732 (18.6) 0.692 (17.6) hole for #10 screw 0.220 (5.59) 0.200 (5.08) dia. 0.24 (6.0) 0.18 (4.6) 0.50 (12.7) 0.44 (11.7) 0.24 (6.0) 0.18 (4.6) gbpc-w gbpc 1.135 (28.8) 1.115 (28.3) 0.672 (17.1) 0.632 (16.1) 0.732 (18.6) 0.692 (17.6) 0.094 (2.4) dia. 0.034 (0.86) 0.030 (0.76) 0.25 (6.35) ac 0.840 (21.3) 0.740 (18.8) 0.582 (14.8) 0.542 (13.8) 0.672 (17.1) 0.632 (16.1) 1.135 (28.8) 1.115 (28.3) 0.310 (7.62) 0.290 (7.36) 0.034 (0.86) 0.030 (0.76) hole for #10 screw 0.220 (5.59) 0.200 (5.08) dia.
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